Date of Publication :7th September 2015

Abstract: This work focusses on the use of Silicon Germanium (Si0.74Ge0.26) alloy and Germanium (Ge) as substrate materials for the simulation of MOS devices having a high–K material. HfO2 was used as the dielectric material and Al as a metal gate. Two MOS devices on Si0.74Ge0.26 and Ge substrates have been simulated and their capacitance-voltage analysis has been done at different frequencies and compared. A comparative analysis of electrical characteristics of n-type MOSFETs made from Si0.74Ge0.26 and Ge substrate have been done in which channel length was varied to see the short-channel effects.

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