Open Access Journal

ISSN : 2394 - 6849 (Online)

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

Open Access Journal

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

ISSN : 2394-6849 (Online)

Reference :

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    [3] G. Chen, M. Li, C. Ang, J. Zheng, and D. Kwong, “Dynamic NBTI of p-MOS transistors and its impact on MOSFET scaling,” IEEE Elec. Dev. Lett., vol. 23, no. 12, pp. 734–736, 2002.

    [4] S. Mahapatra, P. Bharath Kumar, T. Dalei, D. Sana, and M. Alam,“Mechanism of negative bias temperature instability in CMOS devices:degradation, recovery and impact of nitrogen,” in Tech. Dig.Intl. Elec. Dev. Meeting, 2004, pp. 105–108.

    [5] S. Mahapatra and M. Alam, “A predictive reliability model for PMOS bias temperature degradation,” in Tech. Dig. Intl. Elec. Dev. Meeting, 2002, pp. 505–508.

    [6] R. Vattikonda, W. Wang, and Y. Cao, “Modeling and Minimizationof PMOS NBTI Effect for Robust Nanometer Design,” in Proc. Of Design Automation Conference, 2006, pp. 1047–1052.

    [7] S. V. Kumar, C. H. Kim, and S. S. Sapatnekar, “An Analytical Model for Negative Bias Temperature Instability,” in IEEE/ACM Intl. Conf. on ComputerAided Design, 2006.

    [8] S. Kumar, C. Kim, and S. Sapatnekar, “Impact of NBTI on SRAM Read Stability and Design for Reliability,” in Intl. Symp. on Quality Electronic Design, 2006, pp. 210–218.

    [9] B. Paul, K. Kang, H. Kufluoglu, M. Alam, and K. Roy, “Temporal Performance Degradation under NBTI: Estimation and Design for Improved Reliability of Nanoscale Circuits,” in Proc. of Design, Automation and Test in Europe, vol. 1, 2006, pp. 1–6.

    [10] A. Abdollahi, F. Fallah, and M. Pedram, “Leakage current reduction in CMOS VLSI circuits by input vector


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