[1] C. Liang, G. Meng, Y. Lei, F. Phillipp, L.D. Zhang, “Catalytic growth of semiconducting In2O3 nanofibers”, Adv. Mater, vol. 13, pp. 1330–1333, 2001.

[2] D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, C. Zhou, “Ultraviolet photodetection properties of indium oxide nanowires”, Appl. Phys. A, vol. 77, pp.163–166, 2003.

[3] G. Korotcenkov, V. Brinzari, A. Cerneavschi, M. Ivanov, V. Golovanov, A. Cornet, J.Morante, A. Cabot, J. Arbio, “The influence of film structure on In2O3 gas response”, Thin Solid Films, vol. 460, pp. 315–323, 2004.

[4] D.G. Shchukin, R.A. Caruso, “Template synthesis and photocatalytic properties of porous metal oxide spheres formed by nanoparticle infiltration”, Chem. Mater, vol. 16, pp. 2287–2292, 2004.

[5] Reyes-Gil KR, Reyes-Garcia EA, Raftery D: “Nitrogen-doped In2O3 thin film electrodes for photocatalytic water splitting”. J Phys Chem C, vol. 111, pp. 14579–14588, 2007.

[6] E.A. Forsh, A.M. Abakumov, V.B. Zaytsev, E.A. Konstantinova, P.A. Forsh, M.N. Rumyantseva, A.M. Gaskov, P.K. Kashkarov, “Optical and photoelectrical properties of nanocrystalline indium oxide with small grains”, Thin Solid Films, vol. 595, pp. 25–31, 2015.

[7] J. Huang, L. Gao, “Synthesis and characterization of porous single-crystal like In2O3 nanostructures via a solvothermal annealing route”, Journal of the American Ceramic Society, vol. 89, pp. 724–727, 2006.

[8] N. Donato, E. Neri, “Co sensing devices based on indium oxide nanoparticles prepared by laser ablation in water”, Thin solid films, vol. 520, pp. 922-926, 2011.

[9] A.Sudha, S.L. Sharma, T.K. Maity, “Effects of annealing temperature on structural and electrical properties of indium oxide thin films prepared by thermal evaporation”, Materials Letters, vol. 157, pp. 19–22, 2015.

[10] S.Cho, “Effects of rapid thermal annealing on the properties of In2O3 thin films grown on glass substrate by rf reactive magnetron sputtering”, Microelectron. Eng., vol. 89, pp. 84–88, 2012.

[11] G. Korotcenkov, V. Brinzari, A. Cerneavschi, A. Cornet, J. Morante, A. “Cabot, J. Arbiol, Crystallographic characterization of In2O3 films deposited by spray pyrolysis”, Sensors and Actuators B: Chemical, vol. 84, pp. 37, 2002.

[12] Radhouane Bel Hadj Tahar, Takayuki Ban, Yutaka Ohya, Y. Takahashi, “Optical, structural, and electrical properties of indium oxide thin films prepared by the solgel method”, J. Appl. Phys. vol. 82, pp. 865, 1997.

[13] D. Selvakumar, N. Dharmaraj, K. Kadirvelu, N.S. Kumar, V.C. Padaki, “Effect of Sintering Temperature on Structural and Optical Properties of Indium (III) oxide Nanoparticles Prepared with Triton X-100 by Hydrothermal Method”, Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy , 2014.

[14] O. Nilsen, R. Balasundaraprabhu, E.V. Monakhov, N. Muthukumarasamy, H. Fjellvag, B.G. Svensson, “Thin films of In2O3 by atomic layer deposition using In(acac)3”, Thin Solid Films, vol. 517,pp. 6320–6322, 2009.

[15] M. Girtan, G. Folcher, “Structural and optical properties of indium oxide thin films prepared by an ultrasonic spray CVD process”, Surf. Coat. Technol., vol. 172, pp. 242–250, 2003.

[16] D. Beena, K.J. Lethy, R. Vinodkumar, V.P. Mahadevan Pillai, V. Ganesan, D.M.Phase, S.K.Sudheer, “Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films”, Appl. Surf. Sci., vol. 255. pp. 8334– 8342, 2009.

[17] W.J. Maeng, Dong-wonChoi, Jozeph Park, Jin-Seong Park, “Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant”, Ceramics International 41 (2015) 10782–10787.

[18] Jong Seok Jeong, Young Heon Kim and Jeong Yong Lee, “Morphology and Structure of Nano-Sized In2O3 Crystals Synthesized by Wet Reaction”, Journal of the Korean Physical Society, vol. 42, pp. S254-S257, 2003.

[19] Chong SK, Goh BT, Dee CF, Rahman SA, “Study on the role of filament temperature on growth of indiumcatalyzed silicon nanowires by the hot wire chemical vapor deposition technique”. Mater Chem. Phys., vol. 13, pp. 635–643, 2012

[20] C. R. Crowell, S. M. Sze, “Current transport in Metal Semiconductor barriers”, Solid-State Electronics Pergamon Press. vol. 9, pp. 1035-1048, 1966.

[21] F. A. Padovani and R. Stratton, “Field and Thermionic-Field Emission in schottky Barriers”, SolidState Electronics Pergamon Press, vol. 9, pp. 695-707, 1966.

[22] R.T. Tung, “Schottky formation at single-crystal metal-semiconductor interface”, Perspectives in condensed Matter Physics, vol. 4, pp. 169-172, 1990.

[23] A. M. Cowley, S. M. Sze, “Surface state and Barrier Height of metal-semiconductor system”, J. Appl. Phys., vol. 36, pp. 3212, 1965.

[24] W. Zheng, X.F. Lu, W. Wang, Z.Y. Li, H.N. Zhang, Y. Wang, Z.J. Wang, C. Wang, “A highly sensitive and fast-responding sensor based on electro spun In2O3 nanofibers”, Sensors and Actuators Chemical, vol. 142, pp. 61–65, 2009.