Open Access Journal

ISSN : 2394 - 6849 (Online)

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

Open Access Journal

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

ISSN : 2394-6849 (Online)

Optical and Structural Analysis of TiO2 Nan Wires Deposited on Gallium Nitride Substrate and its Photo Detector Applications

Author : Rosy Kimneithem Haokip 1 Longjam Abungcha Meitei 2 Pheiroijam Pooja 3 Chitralekha Ngangbam 4 Biraj Shougaijam 5

Date of Publication :7th April 2016

Abstract: Titanium Dioxide (TiO2) Nanowires (NWs) were synthesized on p-GaN substrate using pressed and sintered TiO2 material by Glancing Angle Deposition Technique (GLAD) inside the e-beam evaporation chamber. The XRD measurements indicates the presence of both rutile and anatase phase of TiO2 crystals. The absorption measurement of p-GaN/TiO2 NWs sample shows the absorption enhancement in Ultraviolet and visible region as compared to GaN (p)/TiO2 Thin Film (TF) sample. The calculated band gap energy from the absorption measurement was found to be ~3.23eV. The photoluminescence (PL) measurement excitation at 340 nm shows the multiple peaks at ~3.3, ~3.1 and ~2.8 eV. The highest emission peak at ~3.3 eV from PL analysis may be the main band transition of TiO2 NWs which also supports the band gap energy observed from absorption measurement. The fabricated Al/TiO2 NW/TiO2 TF/p-GaN based photodetector device gives a sharp rise time ~1.05 sec and fall time ~0.38 sec promising for optoelectronic applications.

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