Open Access Journal
ISSN : 2394 - 6849 (Online)
International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)
Open Access Journal
International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)
ISSN : 2394-6849 (Online)
Reference :
[1] A. J. Bhavnagarwala,“The impact of intrinsic device fluctuations on CMOS SRAM cell stability,” IEEE J. Solid-State Circuits, vol. 36, no. 4, pp. 658–665, Apr. 2001.
[2] S. Jae-Yoon, Y. Hongil, C. Ki-Chul, L. Hyun-Seok, H. Sang-Pyo, L. Kyu-Chan, Y. Jei-Hwan, S. Dong-Il, and C. Soo-In, “A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dualreferenced adjustment scheme for temperature sensor,”
[3] S. Mukhopadhyay, “Design of a process variation tolerant self-repairing SRAM for yield enhancement in nanoscaled CMOS,” in Proc. IEEE Int. Test Conf., Nov. 2005, pp. 1126–1135.
[4] S. Mukhopadhyay, “Reduction of parametric failures in sub-100-nm SRAM array using body bias,” IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 27, no. 1, pp. 174–183, Jan. 2008
[5] Niladri Narayan Mojumder,” A post silicon-tuning technique to improve parametric yield of SRAM array using body bias (BB)”. in Proc. IEEE Int. Test Conf., Nov. 2009.
[6] Z. GUO, S. BALASUBRAMANIAN, R. ZLATANOVICI, T.-J. KING, AND B. NIKOLIC, “FINFET-BASED SRAM DESIGN,” IN PROC. LOW POWER ELECTRON. DESIGN, INT. SYMP., AUG. 2005, PP. 2–7.