Open Access Journal

ISSN : 2394 - 6849 (Online)

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

Open Access Journal

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

ISSN : 2394-6849 (Online)

Reference :

  1. [1] A. J. Bhavnagarwala,“The impact of intrinsic device fluctuations on CMOS SRAM cell stability,” IEEE J. Solid-State Circuits, vol. 36, no. 4, pp. 658–665, Apr. 2001.

    [2] S. Jae-Yoon, Y. Hongil, C. Ki-Chul, L. Hyun-Seok, H. Sang-Pyo, L. Kyu-Chan, Y. Jei-Hwan, S. Dong-Il, and C. Soo-In, “A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dualreferenced adjustment scheme for temperature sensor,”

    [3] S. Mukhopadhyay, “Design of a process variation tolerant self-repairing SRAM for yield enhancement in nanoscaled CMOS,” in Proc. IEEE Int. Test Conf., Nov. 2005, pp. 1126–1135.

    [4] S. Mukhopadhyay, “Reduction of parametric failures in sub-100-nm SRAM array using body bias,” IEEE Trans. Comput.-Aided Design Integr. Circuits Syst., vol. 27, no. 1, pp. 174–183, Jan. 2008

    [5] Niladri Narayan Mojumder,” A post silicon-tuning technique to improve parametric yield of SRAM array using body bias (BB)”. in Proc. IEEE Int. Test Conf., Nov. 2009.

    [6] Z. GUO, S. BALASUBRAMANIAN, R. ZLATANOVICI, T.-J. KING, AND B. NIKOLIC, “FINFET-BASED SRAM DESIGN,” IN PROC. LOW POWER ELECTRON. DESIGN, INT. SYMP., AUG. 2005, PP. 2–7.


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