Author : Sandeep Kumar 1
Date of Publication :16th August 2017
Abstract: The paper proposed 2-8GHz wide bandwidth CMOS low noise amplifier using image network technique for 4G LTE application. The proposed circuit are made by cascade stage of CMOS common gate-common source (CG-CS), input and output matching network. The novel image network technique in the proposed circuit investigates inverse impedance at the output and provides higher wideband and low noise figure. These two most important observed parameters overcome the problem of high speed data rate in the 4G LTE application. The proposed circuit is implemented and analyzed using RF simulator ADS. Chip fabrication and measurement is done by using TSMC 45nm commercial design Kit. The results achieved minimum noise figure of 1.6dB with highest gain of 18dB. Experimental and simulated results are made good agreement with each other.