Open Access Journal

ISSN : 2394 - 6849 (Online)

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

Open Access Journal

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

ISSN : 2394-6849 (Online)

High Power High-efficiency GaN Class E Power Amplifier for Commercial Defence

Author : Anil M. Birajdar 1

Date of Publication :21st February 2018

Abstract: In this paper, a class E power amplifier in GaN on SiC HEMT process with high efficiency for Commercial Defence application is presented. The proposed class E amplifier in 3.0-3.5 GHz band delivers 112-136 W output power with power added efficiency better than 60% and drain efficiency better than 65%. PA demonstrates a large signal gain of 11 dB at 1 dB compression point. These results are verified by harmonic balance simulations

Reference :

    1. Thomas Madar, Eric W. Bryerton, Milica Markovic, Michel Forman And Zoya Popovis, “Switched-Mode HighEfficiency Microwave Power Amplifiers in a Free-Space Power-Combiner Array” IEEE Transaction on Microwave Theory and Techniques, Vol. 46, No. 10, October 1998
    2. F. H. Raab, “Idealized operation of the class-E tuned power amplifier,” IEEE Trans. Circuits Syst., vol. CAS-24, pp. 725–735, Dec. 1977.
    3. Mun-Woo Lee, Yong-Sub Lee, Yoon-Ha Jeong, “A HighEfficiency GaN HEMT Hybrid Class-E Power Amplifier for 3.5 GHz WiMAX Applications” 38th European Microwave Conference, October 2008, Amsterdam, The Netherlands
    4. A.V.Grebennikov, H.Jaeger, ”Class E with parallel circuit - a new challenge for high-efficiency RF and microwave power amplifiers”, IEEE MTT-S International Microwave Symposium Digest, Vol. 3, 27 June 2002, pp. 1627-1630

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