Author : Anil M. Birajdar 1
Date of Publication :21st February 2018
Abstract: In this paper, a class E power amplifier in GaN on SiC HEMT process with high efficiency for Commercial Defence application is presented. The proposed class E amplifier in 3.0-3.5 GHz band delivers 112-136 W output power with power added efficiency better than 60% and drain efficiency better than 65%. PA demonstrates a large signal gain of 11 dB at 1 dB compression point. These results are verified by harmonic balance simulations
- Thomas Madar, Eric W. Bryerton, Milica Markovic, Michel Forman And Zoya Popovis, “Switched-Mode HighEfficiency Microwave Power Amplifiers in a Free-Space Power-Combiner Array” IEEE Transaction on Microwave Theory and Techniques, Vol. 46, No. 10, October 1998
- F. H. Raab, “Idealized operation of the class-E tuned power amplifier,” IEEE Trans. Circuits Syst., vol. CAS-24, pp. 725–735, Dec. 1977.
- Mun-Woo Lee, Yong-Sub Lee, Yoon-Ha Jeong, “A HighEfficiency GaN HEMT Hybrid Class-E Power Amplifier for 3.5 GHz WiMAX Applications” 38th European Microwave Conference, October 2008, Amsterdam, The Netherlands
- A.V.Grebennikov, H.Jaeger, ”Class E with parallel circuit - a new challenge for high-efficiency RF and microwave power amplifiers”, IEEE MTT-S International Microwave Symposium Digest, Vol. 3, 27 June 2002, pp. 1627-1630