High Power High-efficiency GaN Class E Power
Amplifier for Commercial Defence
Author : Anil M. Birajdar 1
Date of Publication :21st February 2018
Abstract: In this paper, a class E power amplifier in GaN on SiC HEMT process with high efficiency for Commercial Defence application is presented. The proposed class E amplifier in 3.0-3.5 GHz band delivers 112-136 W output power with power added efficiency better than 60% and drain efficiency better than 65%. PA demonstrates a large signal gain of 11 dB at 1 dB compression point. These results are verified by harmonic balance simulations
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