Author : Longjam Abungcha Meitei 1
Date of Publication :7th April 2016
Abstract: Indium oxide (In2O3) thin films have been prepared by Physical Vapor Deposition technique using e-beam evaporator on the GaN substrate. The structural and morphological properties of In2O3 thin film were studied using X-Ray Diffraction (XRD) and Field Emission Gun Scanning Electron Microscope (FEG-SEM). The FESEM image shows the successful deposition of In2O3 thin film on GaN substrate. The optical properties of In2O3 thin films were investigated by using UV-vis and Photoluminescence (PL) measurements. The In2O3 thin film based photodetector device shows the rectifying behavior which may be due to the Schottky junction formation between Au and In2O3. The dark current ~15 ?A was increased to ~ 36.3 ?A under light illumination at -2V bias voltage. The In2O3 thin film device shows a fast response upon ON/OFF switching of white light.
Reference :
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