Author : Rosy Kimneithem Haokip 1
Date of Publication :7th April 2016
Abstract: Titanium Dioxide (TiO2) Nanowires (NWs) were synthesized on p-GaN substrate using pressed and sintered TiO2 material by Glancing Angle Deposition Technique (GLAD) inside the e-beam evaporation chamber. The XRD measurements indicates the presence of both rutile and anatase phase of TiO2 crystals. The absorption measurement of p-GaN/TiO2 NWs sample shows the absorption enhancement in Ultraviolet and visible region as compared to GaN (p)/TiO2 Thin Film (TF) sample. The calculated band gap energy from the absorption measurement was found to be ~3.23eV. The photoluminescence (PL) measurement excitation at 340 nm shows the multiple peaks at ~3.3, ~3.1 and ~2.8 eV. The highest emission peak at ~3.3 eV from PL analysis may be the main band transition of TiO2 NWs which also supports the band gap energy observed from absorption measurement. The fabricated Al/TiO2 NW/TiO2 TF/p-GaN based photodetector device gives a sharp rise time ~1.05 sec and fall time ~0.38 sec promising for optoelectronic applications.
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