Author : Pheiroijam Pooja 1
Date of Publication :7th April 2016
Abstract: Indium Oxide (In2O3) Nan wire (NW) arrays have been fabricated on n-Si substrate using the e-beam evaporation system. Glancing Angle Deposition (GLAD) technique was employed to synthesize the In2O3 NWs. The polycrystalline nature was observed from X-Ray Diffraction analysis of In2O3 NWs deposited on Si substrate. The Photoluminescence (PL) analysis shows the emission peak in the visible region ~ 434 nm which may be the band to band transition energy (2.85eV) of the In2O3 NWs. Optical absorption measurement shows the In2O3 NW sample absorbed much light ~1.5 times in UV and visible regions as compared to In2O3 TF sample. The Current-Voltage (I-V) measurement of the NW Device (Au/In2O3-NW/ In2O3-TF/Si) shows the photocurrent enhancement in both forward and reversed biased conditions. . The NW device shows fast rise and fall response time ~3 sec under on/off switching at -3V respectively.
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