Author : N Khadar basha 1
Date of Publication :13th March 2017
Abstract: Memristor is a novel two-port circuit element with a memory, as device that can be used in many applications such as memory, logic, and neuromorphic systems. As passive circuit element the memristor would be a useful tool to analysis circuit behavior via simulation. SPICE model is appropriate way to describe real device operation. In this paper, we incorporate a SPICE model of memristor with threshold logic circuit for nonlinear dopant drift. Various window functions has been proposed in nonlinear ion drift memristor devices. Circuit analysis of the proposed memristor models are studied by investigating and characterizing the physical electronic and behavioral properties of memristor device. The simulation output should have a current–voltage hysteresis curve, which looks like bow tie. The loop maps the switching behavior of the device. Then, make comparison of these memristor implemented circuit design between different type of memristor window models. The research verifies the proposed threshold memristor model and the possibilities of implementing memristor model in practical analog circuit
Reference :
-
[1] R. Stanley Williams. “How we found the missing memristor”, IEEE Spectrum 12.08 December 2008..
[2] L. O. Chua, (1971). “Memristor – the missing circuit element”, IEEE Transactions on Circuit Theory, 18(5): 507–519.
[3] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, (2008). “The missing memristor found”, Nature, 453(7191):80–83, 2008.
[4] Rak, A.; Cserey, G. “Macromodeling of the Memristor in SPICE.” Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions, vol.29, no.4, pp.632-636, April 2010.
[5] Abdalla, H.; Pickett, M.D. "SPICE modeling of memristors," Circuits and Systems (ISCAS), 2011 IEEE International Symposium, vol., no.28, pp.1832-1835, 15-18 May 2011
[6] Z. Biolek, D. Biolek, and V. Biolkov´a. “SPICE model of memristor with nonlinear dopant drift”, Radioengineering J. , 18(2):211, 2009b.
[7] J. Joshua Yang, Matthew D. Pickett, Xuema Li, Douglas A. A. Ohlberg, Duncan R. Stewart* And R. Stanley Williams k. “Memristive Switching Mechanism For Metal/Oxide/Metal Nanodevices” 15 June 2008; doi:10.1038/nnano.2008.160.
[8] T. Prodromakis, B. P. Peh, C. Papavassiliou, and C. Toumazou, (2001). “A versatile memristor model with nonlinear dopant kinetics”, IEEE Trans. on Electron Devices, vol. 58, no.9, pp. 3099-3105, Sept. 2011.
[9] WILLIAMS, R. S. “How we found the missing memristor”, IEEE Spectrum, 2/01/2008, p. 1-11, www.spectrum.ieee.org/print/7024.
[10] A. J. van de Goor (1998). “Testing Semiconductors Memories, Theory and Practice”, John Wiley & Sons Inc.
[11] The International Technology Roadmap for Semiconductor 2011. Available online http://www.itrs.net
[12] S. Benderli and T. Wey, “On SPICE macromodelling of TiO2 memristors,” Electronics letters, vol. 45, no. 7, pp. 377–379, 2009.