Date of Publication :2nd June 2024

Abstract: This study explores the efficiency of SiGe pocket doping within the channel of silicon-based junctionless MOSFETs for controlling leakage current while enhancing radiofrequency (RF) performance. Junctionless MOSFETs have garnered attention for their simplified fabrication process and reduced short-channel effects compared to traditional transistors. However, managing leakage current remains crucial, especially in high-frequency analog circuits with stringent performance requirements. This research investigates its dual role in mitigating leakage current and boosting RF characteristics by strategically incorporating SiGe pocket doping. Through extensive silvaco TCAD simulations, we explore the impact of SiGe pocket doping on analog and RF performance. The proposed device yields a 5.093×10-13A off-current, 1.5 mA on-current, 0.41 threshold voltage, switching speed is 109, transconductance is 38.4 mS, and cut-off frequency of 468.44 GHz. The findings reveal that SiGe pocket doping effectively confines carriers, thereby minimizing leakage paths and improving RF performance parameters. This research paves the way for future exploration of material combinations and fabrication techniques to unlock the full potential of double gate junctionless MOSFETs with SiGe pocket doping and differentially doped channels. These findings highlight the possibility of using SiGe pocket doping as a practical method to improve the performance and dependability of junctionless MOSFETs in analog radio applications

Reference :