Open Access Journal
ISSN : 2394 - 6849 (Online)
International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)
Open Access Journal
International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)
ISSN : 2394-6849 (Online)
Reference :
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[2] Vivek kumar, Vikas Manohar and Manisha Pattanaik “Novel Ultra Low Leakage FinFET Based SRAM Cell”. 2016 IEEE International Symposium on Nanoelectronic and Information Systems.
[3] G.Boopathi Raja, M.Madheswaran, “Design and Performance Comparison of 6-T SRAM Cell in 32nm CMOS, FinFET and CNTFET Technologies”. International Journal of Computer Applications, 2013.
[4] Priya Thakare, Sanjay Tembhurne “A Power Analysis of SRAM Cell Using 12T Topology for Faster Data Transmission: A Review”. International Research Journal of Engineering and Technology (IRJET), 2016.
[5] S.A. Tawfik and V. Kursun, “Low Power and Stable FinFET SRAM with Static Independent Gate Bias for Enhanced Integration Density”, 14th IEEE International conference on electronics, circuits and systems.
[6] Aly, R. E., Bayoumi, M. A ,"Low-Power Cache Design Using 7T SRAM Cell," IEEE Transactions On Circuits And Systems-II: Express Briefs, Vol. 54, No. 4, April 2007.
[7] V.Gupta and M.Anis, Member, IEEE "Statistical Design ofthe 6T SRAM bit Cell," IEEE Transactions On Circuits And Systems-I: Regular Papers, Vol. 57, No. 1 , January 2010 .
[8] V.Gupta and M.Anis, Member, IEEE "Statistical Design ofthe 6T SRAM bit Cell," IEEE Transactions On Circuits And Systems-I: Regular Papers, Vol. 57, No. 1 , January 2010 .
[10] Ambrish Mall, Suryabhan Pratap Singh, Manish Mishra, Geetika Shrivastava, “Analysis Of 12t Sram Cell For Low Power Application” Deportment of Electronics, DDUGU Gorakhpur (273009),(U.P), INDIA. Amity School of engineering & Technology.
[11] K.G.Dharani,“Comparative Analysis of 6 Transistor, 8 Transistor and 12 Transistor SRAM Memories” Research Scholar,Karpagam University, Coimbatore Tamilnadu, India.