Open Access Journal

ISSN : 2394 - 6849 (Online)

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

Open Access Journal

International Journal of Engineering Research in Electronics and Communication Engineering(IJERECE)

Monthly Journal for Electronics and Communication Engineering

ISSN : 2394-6849 (Online)

Reference :

  1. [1] Satyendra Kumar, Vinay Anand Tikkiwal, Rariom Gupta “Read SNM Free SRAM Cell Design in Deep Sub micron Technology”. 2013 International Conference on Signal Processing And Communication (Icsc).

    [2] Vivek kumar, Vikas Manohar and Manisha Pattanaik “Novel Ultra Low Leakage FinFET Based SRAM Cell”. 2016 IEEE International Symposium on Nanoelectronic and Information Systems.

    [3] G.Boopathi Raja, M.Madheswaran, “Design and Performance Comparison of 6-T SRAM Cell in 32nm CMOS, FinFET and CNTFET Technologies”. International Journal of Computer Applications, 2013.

    [4] Priya Thakare, Sanjay Tembhurne “A Power Analysis of SRAM Cell Using 12T Topology for Faster Data Transmission: A Review”. International Research Journal of Engineering and Technology (IRJET), 2016.

    [5] S.A. Tawfik and V. Kursun, “Low Power and Stable FinFET SRAM with Static Independent Gate Bias for Enhanced Integration Density”, 14th IEEE International conference on electronics, circuits and systems.

    [6] Aly, R. E., Bayoumi, M. A ,"Low-Power Cache Design Using 7T SRAM Cell," IEEE Transactions On Circuits And Systems-II: Express Briefs, Vol. 54, No. 4, April 2007.

    [7] V.Gupta and M.Anis, Member, IEEE "Statistical Design ofthe 6T SRAM bit Cell," IEEE Transactions On Circuits And Systems-I: Regular Papers, Vol. 57, No. 1 , January 2010 .

    [8] V.Gupta and M.Anis, Member, IEEE "Statistical Design ofthe 6T SRAM bit Cell," IEEE Transactions On Circuits And Systems-I: Regular Papers, Vol. 57, No. 1 , January 2010 .

    [10] Ambrish Mall, Suryabhan Pratap Singh, Manish Mishra, Geetika Shrivastava, “Analysis Of 12t Sram Cell For Low Power Application” Deportment of Electronics, DDUGU Gorakhpur (273009),(U.P), INDIA. Amity School of engineering & Technology.

    [11] K.G.Dharani,“Comparative Analysis of 6 Transistor, 8 Transistor and 12 Transistor SRAM Memories” Research Scholar,Karpagam University, Coimbatore Tamilnadu, India.


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